DAMAGE-FREE PASSIVATION OF INALAS INGAAS HFETS BY USE OF ECR-DEPOSITED SIN/

Authors
NEWSON DJ MURRELL AJ GRIMWOOD RC HENNING ID
Citation
Dj. Newson et al., DAMAGE-FREE PASSIVATION OF INALAS INGAAS HFETS BY USE OF ECR-DEPOSITED SIN/, Electronics Letters, 29(5), 1993, pp. 472-474
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
5
Year of publication
1993
Pages
472 - 474
Database
ISI
SICI code
0013-5194(1993)29:5<472:DPOIIH>2.0.ZU;2-D
Abstract
Silicon nitride deposited by electron-cyclotron resonance has been use d to fully passivate InAlAs/InGaAs HFETs. The passivation process did not increase the gate leakage current, and passivated 1 mum HFETs had a breakdown voltage of 15 V. These results illustrate the potential of ECR nitride for passivation of InP-based semiconductor devices.