GEMOW REFRACTORY OHMIC CONTACTS TO N-TYPE GAAS WITH IN0.5GA0.5AS CAP LAYER

Authors
MERKEL KG BRIGHT VM SCHAUER SN HUANG CI ROBINSON GD
Citation
Kg. Merkel et al., GEMOW REFRACTORY OHMIC CONTACTS TO N-TYPE GAAS WITH IN0.5GA0.5AS CAP LAYER, Electronics Letters, 29(5), 1993, pp. 480-481
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
5
Year of publication
1993
Pages
480 - 481
Database
ISI
SICI code
0013-5194(1993)29:5<480:GROCTN>2.0.ZU;2-T
Abstract
GeMoW is presented as a refractory ohmic contact to n-type GaAs with a n In0.5Ga0.5As cap layer. The contact exhibits ohmic behaviour over a wide annealing temperature range from 300 to 700-degrees-C. A minimum contact resistance of 0-176 OMEGA mm was obtained following furnace an nealing at 500-degrees-C.