LPCVD STUDY OF THE SI-B-C SYSTEM

An experimental approach of the Si-B-C system was performed by L.P.C.V .D. fran TMS (tetramethylsilane), BCl3, CH4 and H-2 mixtures. By means of an experimental design it was shown that this system is closely re lated to the TMS chemistry driven by temperature and pressure, which a re essential with respect to the nature and properties of the deposite d solid phases. These materials are poorly crystallised or quasi-amorp hous. Nevertheless the major phase seems to be a boron - rich solid so lution in silicon carbide where boron is substituted to silicon.