INSITU HVEM STUDY OF DOPANT DEPENDENT (113)-DEFECT GENERATION IN SILICON DURING 1-MEV ELECTRON-IRRADIATION

Authors
ROMANORODRIGUEZ A VANHELLEMONT J
Citation
A. Romanorodriguez et J. Vanhellemont, INSITU HVEM STUDY OF DOPANT DEPENDENT (113)-DEFECT GENERATION IN SILICON DURING 1-MEV ELECTRON-IRRADIATION, Microscopy research and technique, 25(2), 1993, pp. 181-182
Citations number
2
Categorie Soggetti
Microscopy,Biology
Journal title
Microscopy research and technique → ACNP
ISSN journal
1059910X
Volume
25
Issue
2
Year of publication
1993
Pages
181 - 182
Database
ISI
SICI code
1059-910X(1993)25:2<181:IHSODD>2.0.ZU;2-Z