LOW-THRESHOLD 0.98-MU-M ALUMINUM-FREE STRAINED-QUANTUM-WELL INGAAS INGAASP/INGAP LASERS/

Authors
CHANGHASNAIN CJ BHAT R LEBLANC H KOZA MA
Citation
Cj. Changhasnain et al., LOW-THRESHOLD 0.98-MU-M ALUMINUM-FREE STRAINED-QUANTUM-WELL INGAAS INGAASP/INGAP LASERS/, Electronics Letters, 29(1), 1993, pp. 1-2
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
1
Year of publication
1993
Pages
1 - 2
Database
ISI
SICI code
0013-5194(1993)29:1<1:L0ASII>2.0.ZU;2-H
Abstract
Aluminium-free strained-quantum-well In0.2Ga0.8As lasers employing nov el two-stepped InGaAsP confinement layers and InGaP cladding layers on a GaAs substrate are demonstrated for the first time. Threshold curre nt density as low as 58 A/cm2 is obtained with broad stripe lasers. Th is threshold current density is, to the authors' knowledge, the lowest reported for 0.98 mum lasers grown by organic chemical vapour deposit ion.