14 GHZ BANDWIDTH MSM PHOTODIODE ALGAAS GAAS HEMT MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER/

Authors
HURM V LUDWIG M ROSENZWEIG J BENZ W BERROTH M BOSCH R BRONNER W HULSMANN A KOHLER K RAYNOR B SCHNEIDER J
Citation
V. Hurm et al., 14 GHZ BANDWIDTH MSM PHOTODIODE ALGAAS GAAS HEMT MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER/, Electronics Letters, 29(1), 1993, pp. 9-10
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
1
Year of publication
1993
Pages
9 - 10
Database
ISI
SICI code
0013-5194(1993)29:1<9:1GBMPA>2.0.ZU;2-F
Abstract
A monolithic optoelectronic receiver consisting of an MSM photodiode a nd a two-stage amplifier has been fabricated using an enhancement/depl etion 0.3 mum recessed-gate AlGaAs/GaAs HEMT process. The bandwidth of 14.3 GHz implies suitability for transmission rates of up to 20 Gbit/ s. The transimpedance is 670 OMEGA (into 50 OMEGA) and the projected s ensitivity is -16.4 dBm (BER = 10(-9)).