POLARIZATION-INDEPENDENT REFRACTIVE-INDEX CHANGE IN INGAAS INGAASP TENSILE STRAINED QUANTUM-WELL/

Authors
AIZAWA T RAVIKUMAR KG YAMAUCHI R
Citation
T. Aizawa et al., POLARIZATION-INDEPENDENT REFRACTIVE-INDEX CHANGE IN INGAAS INGAASP TENSILE STRAINED QUANTUM-WELL/, Electronics Letters, 29(1), 1993, pp. 21-22
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
1
Year of publication
1993
Pages
21 - 22
Database
ISI
SICI code
0013-5194(1993)29:1<21:PRCIII>2.0.ZU;2-#
Abstract
The polarisation independent refractive index change in the tensile st rained InGaAs/InGaAsP quantum well (QW) structure has been measured ov er the whole spectral range, i,e. near and below the bandgap energy. B y inducing a 0.3% tensile strain in the InGaAs QW, the spectral profil es for the TE and TM modes are brought closer to each other, with the same refractive index change occurring at around 1.565 mum.