ELECTRICAL-PROPERTIES OF SI-IMPLANTED GATE OXIDES

Authors
KIM J JOSHI AB LO GQ KWONG DL LEE S
Citation
J. Kim et al., ELECTRICAL-PROPERTIES OF SI-IMPLANTED GATE OXIDES, Electronics Letters, 29(1), 1993, pp. 34-35
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
1
Year of publication
1993
Pages
34 - 35
Database
ISI
SICI code
0013-5194(1993)29:1<34:EOSGO>2.0.ZU;2-O
Abstract
The electrical properties of MOS capacitors with Si-implanted SiO2 are investigated. It is demonstrated that a hysteresis effect is present in the capacitance-voltage characteristics of MOS capacitors with Si-i mplanted gate oxide. Both fixed charge and interface state density are observed to increase with Si-implant dose. The current conduction in these oxide films was also examined.