CIRCUIT PERFORMANCE OF LOW-TEMPERATURE CMOS POLYSILICON TFT OPERATIONAL-AMPLIFIERS

Authors
YANG HG MIGLIORATO P REITA C FLUXMAN S
Citation
Hg. Yang et al., CIRCUIT PERFORMANCE OF LOW-TEMPERATURE CMOS POLYSILICON TFT OPERATIONAL-AMPLIFIERS, Electronics Letters, 29(1), 1993, pp. 38-40
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
1
Year of publication
1993
Pages
38 - 40
Database
ISI
SICI code
0013-5194(1993)29:1<38:CPOLCP>2.0.ZU;2-9
Abstract
CMOS polysilicon TFT opamps have been designed and fabricated on glass by a low temperature (620-degrees-C) process. A poly-Si SPICE circuit model is employed to optimise bias conditions. Results of tested opam ps are presented.