INFLUENCE OF RESISTANCES ON CHARACTERISTICS OF VERTICALLY INTEGRATED RESONANT-TUNNELING DIODES

Authors
FOBELETS K VOUNCKX R BORGHS G
Citation
K. Fobelets et al., INFLUENCE OF RESISTANCES ON CHARACTERISTICS OF VERTICALLY INTEGRATED RESONANT-TUNNELING DIODES, Electronics Letters, 29(1), 1993, pp. 57-59
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
1
Year of publication
1993
Pages
57 - 59
Database
ISI
SICI code
0013-5194(1993)29:1<57:IOROCO>2.0.ZU;2-T
Abstract
An equivalent circuit for vertically integrated resonant tunnelling di odes with different diode area is proposed. Vertical and horizontal cu rrent paths through the structure are characterised by resistances whi ch explain the difference between the characteristics of a monolithica lly integrated and a discrete series connection.