MONOLITHIC INTEGRATION OF LASERS WITH FET AND BIPOLAR-TRANSISTORS IN INVERSION CHANNEL TECHNOLOGY

Authors
EVALDSSON PA VANG TA TAYLOR GW SARGOOD SK KIELY PA COOKE P
Citation
Pa. Evaldsson et al., MONOLITHIC INTEGRATION OF LASERS WITH FET AND BIPOLAR-TRANSISTORS IN INVERSION CHANNEL TECHNOLOGY, Electronics Letters, 29(1), 1993, pp. 60-62
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
1
Year of publication
1993
Pages
60 - 62
Database
ISI
SICI code
0013-5194(1993)29:1<60:MIOLWF>2.0.ZU;2-T
Abstract
The first monolithic integration of lasers with HFETs and bipolar tran sistors in inversion channel technology is presented. A threshold curr ent of 2 mA and a slope efficiency of 8 mW/mA was obtained for the bip olar/laser circuit. The transfer characteristic for the integrated HFE T/laser converts voltage to output power. The output efficiency for th is circuit was 2mW/V, where the voltage was divided across the laser a nd the HFET.