SIMULATION OF INFLUENCE OF UNDOPED SPACER LAYERS IN SI SIGE-HBTS ON TRANSIT FREQUENCY/

Authors
ROSSBERG M SCHWIERZ F ALBERS JN SCHREIBER HU
Citation
M. Rossberg et al., SIMULATION OF INFLUENCE OF UNDOPED SPACER LAYERS IN SI SIGE-HBTS ON TRANSIT FREQUENCY/, Electronics Letters, 29(1), 1993, pp. 85-87
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
1
Year of publication
1993
Pages
85 - 87
Database
ISI
SICI code
0013-5194(1993)29:1<85:SOIOUS>2.0.ZU;2-S
Abstract
By means of numerical simulation the influence of undoped (i-) layers at the heterojunctions of Si/SiGe-HBTs on the transistor characteristi cs is shown. An increased transit frequency should be obtained by inse rting an i-Si layer between the emitter and base and an i-SiGe layer b etween the base and collector regions of the HBT.