ROOM-TEMPERATURE 600MW CW OUTPUT POWER PER FACET FROM SINGLE GAINAS GAAS/GAINP LARGE-AREA LASER-DIODE GROWN BY CBE/

Authors
MAUREL P GARCIA JC REGRENY P HIRTZ JP VASSILAKIS E PARENT A BALDY M CARRIERE C
Citation
P. Maurel et al., ROOM-TEMPERATURE 600MW CW OUTPUT POWER PER FACET FROM SINGLE GAINAS GAAS/GAINP LARGE-AREA LASER-DIODE GROWN BY CBE/, Electronics Letters, 29(1), 1993, pp. 91-93
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
1
Year of publication
1993
Pages
91 - 93
Database
ISI
SICI code
0013-5194(1993)29:1<91:R6COPP>2.0.ZU;2-U
Abstract
Continuous wave output power levels of 600 mW at 25-degrees-C are repo rted from 100 mum wide, 300 mum long GaInAs/GaAs/GaInP large area lase r diodes grown by CBE without any facet treatment. At these levels, th e delivered current is 2A, with an associated voltage of less than 1.7 V. The characteristic temperature of the structure is 95 K.