MODIFIED SPICE MODELING OF DC CHARACTERISTICS FOR HIGH-VOLTAGE DMOS TRANSISTORS

Authors
ZHOU MJ DEBRUYCKER A VANCALSTER A WITTERS J SCHOLS G
Citation
Mj. Zhou et al., MODIFIED SPICE MODELING OF DC CHARACTERISTICS FOR HIGH-VOLTAGE DMOS TRANSISTORS, Electronics Letters, 29(1), 1993, pp. 126-127
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
1
Year of publication
1993
Pages
126 - 127
Database
ISI
SICI code
0013-5194(1993)29:1<126:MSMODC>2.0.ZU;2-H
Abstract
An improved SPICE DC model for high-voltage DMOS transistors is propos ed by considering the drift resistance modulation by both the gate and the drain voltages. A nonlinear voltage controlled voltage source (VC VS) is introduced to represent this modulation. Results calculated fro m this model agree well with the experimental curves of the device DC characteristics.