VISIBLE (660 NM) RESONANT CAVITY LIGHT-EMITTING-DIODES

Authors
LOTT JA SCHNEIDER RP VAWTER GA ZOLPER JC MALLOY KJ
Citation
Ja. Lott et al., VISIBLE (660 NM) RESONANT CAVITY LIGHT-EMITTING-DIODES, Electronics Letters, 29(4), 1993, pp. 328-329
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
4
Year of publication
1993
Pages
328 - 329
Database
ISI
SICI code
0013-5194(1993)29:4<328:V(NRCL>2.0.ZU;2-F
Abstract
The demonstration of the first visible resonant cavity light-emitting diodes (RCLEDs) is reported. The devices consist of an InAlGaP straine d quantum well active region surrounded by AlAs/AlGaAs distributed Bra gg reflectors. Linewidths from 0.9 nm (2.6 meV) to 45 run (12.8 mev) w ere obtained by varying the cavity quality factor (Q).