HIGHLY RELIABLE 200 MW ALGAAS LASER-DIODE WITH FUNDAMENTAL TRANSVERSE-MODE

Authors
TAJIRI A MINAKUCHI K KOMEDA K BESSHO Y INOUE Y YODOSHI K YAMAGUCHI T
Citation
A. Tajiri et al., HIGHLY RELIABLE 200 MW ALGAAS LASER-DIODE WITH FUNDAMENTAL TRANSVERSE-MODE, Electronics Letters, 29(4), 1993, pp. 369-370
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
4
Year of publication
1993
Pages
369 - 370
Database
ISI
SICI code
0013-5194(1993)29:4<369:HR2MAL>2.0.ZU;2-7
Abstract
A highly reliable 200mW AlGaAs laser diode with a fundamental transver se mode has been developed, by optimising its structure with a 0.8 mum thick p-cladding layer, a 1200 mum long cavity length, and a front fa cet coating with a low reflectivity of 2%. The maximum output power wa s 500mW, and stable fundamental transverse mode operation was obtained up to 350mW. Stable operation under 200mW and 50-degrees-C was confir med for more than 1200 h. Optical feedback noise was below 3 x 10(-14) Hz-1.