1000 W QCW OUTPUT POWER FROM SURFACE-EMITTING GAAS ALGAAS LASER-DIODEARRAYS/

For the first time, quasicontinuous-wave (QCW) output power levels of 1000 W from monolithic surface emitting laser diodes (M-SELDs) are rep orted to realise the basic structure of the laser diodes, an origin 2- D structure was developed where the epitaxial structure is made on eng raved GaAs substrate and the laser facets are made by a microcleaving technique. With a compact planar association of 10 M-SELDs of 0.1 cm2 WhiCh emits 100 W QCW each (optical power density = 1 kW/cm2) on the s ame submount, a power source of 1000 W QCW has been obtained. The oper ating current is 150 A, the slope efficiency is 7.5 W/A and the optica l divergence of the beam is lower than 20-degrees FWHM in the perpendi cular direction.