3.1X10(5)CM(2) V(S) PEAK ELECTRON MOBILITIES IN INP GROWN BY CHEMICALBEAM EPITAXY/

Authors
RAO TS LACELLE C ROTH AP
Citation
Ts. Rao et al., 3.1X10(5)CM(2) V(S) PEAK ELECTRON MOBILITIES IN INP GROWN BY CHEMICALBEAM EPITAXY/, Electronics Letters, 29(4), 1993, pp. 373-375
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
4
Year of publication
1993
Pages
373 - 375
Database
ISI
SICI code
0013-5194(1993)29:4<373:3VPEMI>2.0.ZU;2-A
Abstract
Chemical beam epitaxy (CBE) growth of very high purity InP with Hall m obility as high as 238 000 cm2/V s at 77K and with a peak value of 311 000 cm2/V s at 50K and residual impurity concentration of 6 x 10(13) cm-1 at 77K is reported for an InP layer grown at 500-degrees-C. These values are the highest mobility values ever reported for InP grown by any molecular beam method.