DIRECT MEASUREMENT OF HOT HOLE DISTRIBUTION IN AN SIGE UNIPOLAR TRANSISTOR STRUCTURE

Authors
LIU HC LI J BUCHANAN M BARIBEAU JM SIMMONS JG
Citation
Hc. Liu et al., DIRECT MEASUREMENT OF HOT HOLE DISTRIBUTION IN AN SIGE UNIPOLAR TRANSISTOR STRUCTURE, Electronics Letters, 29(4), 1993, pp. 407-409
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
4
Year of publication
1993
Pages
407 - 409
Database
ISI
SICI code
0013-5194(1993)29:4<407:DMOHHD>2.0.ZU;2-I
Abstract
A novel SiGe hot hole transistor structure is fabricated and used to s tudy the hot hole distribution in the thin base created by current inj ection. A hot carrier spectroscopy technique is employed, and hot hole distributions are directly measured.