Citation
A. Gruhle et al., 91 GHZ SIGE HBTS GROWN BY MBE, Electronics Letters, 29(4), 1993, pp. 415-417
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
29
Issue
4
Year of publication
1993
Pages
415 - 417
Database
ISI
SICI code
0013-5194(1993)29:4<415:9GSHGB>2.0.ZU;2-5
Abstract
Si/SiGe heterojunction bipolar transistors (HBTs) have been fabricated
with their complete layer structure grown by MBE without interruption
. The maximum measured transit frequency f(T) was 91 GHz and f(max) re
ached 65 GHz. These are the fastest silicon transistors reported to da
te in terms of both f(T) and f(max) figures.