LOGARITHMIC TIME-DEPENDENCE OF PMOSFET DEGRADATION OBSERVED FROM GATECAPACITANCE

Authors
LING CH YEOW YT AH LK YUNG WH CHOI WK
Citation
Ch. Ling et al., LOGARITHMIC TIME-DEPENDENCE OF PMOSFET DEGRADATION OBSERVED FROM GATECAPACITANCE, Electronics Letters, 29(4), 1993, pp. 418-420
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
4
Year of publication
1993
Pages
418 - 420
Database
ISI
SICI code
0013-5194(1993)29:4<418:LTOPDO>2.0.ZU;2-6
Abstract
Hot-carrier degradation in pMOSFETs is observed from an increase in ga te overlap capacitance, due to trapped electrons in the gate oxide inv erting a portion of the channel near the stressed junction. Logarithmi c time growth of the overlap capacitance, and hence of the trapped cha rge, is reported.