ETCH PIT DENSITY DISTRIBUTIONS IN UNDOPED AND DOPED GAAS SINGLE-CRYSTALS

Authors
MORAVEC F STEPANEK B SESTAKOVA V
Citation
F. Moravec et al., ETCH PIT DENSITY DISTRIBUTIONS IN UNDOPED AND DOPED GAAS SINGLE-CRYSTALS, Crystal research and technology, 28(3), 1993, pp. 391-394
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
28
Issue
3
Year of publication
1993
Pages
391 - 394
Database
ISI
SICI code
0232-1300(1993)28:3<391:EPDDIU>2.0.ZU;2-Y
Abstract
The undoped and doped (Si, N, In) GaAs single crystals are grown by ho rizontal Bridgman technique. The etch pit density (EPD) profiles were measured in transverse direction for each crystal. It was found that t he shape of EPD profiles differs in dependence on the used dopant.