ELECTRONIC TRANSPORT-PROPERTIES OF THALLIUM SESQUISELENIDE SINGLE-CRYSTALS

Authors
GAMAL GA
Citation
Ga. Gamal, ELECTRONIC TRANSPORT-PROPERTIES OF THALLIUM SESQUISELENIDE SINGLE-CRYSTALS, Crystal research and technology, 28(3), 1993, pp. 395-399
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
28
Issue
3
Year of publication
1993
Pages
395 - 399
Database
ISI
SICI code
0232-1300(1993)28:3<395:ETOTSS>2.0.ZU;2-T
Abstract
Electronic transport measurements were made on single crystal samples of Tl2Se3. The crystals were prepared by a special design based on Bri dgman technique. The influence of temperature on the electrical conduc tivity, Hall effect, Hall mobility and the carrier concentration was i nvestigated in the temperature range 200 - 400 K. The energy gap as we ll as the ionization energy were calculated. The scattering mechanism of the charge carrier was discussed in the same temperature range.