SUPERLUMINESCENT DIODES FOR VISIBLE (670 NM) SPECTRAL RANGE BASED ON ALGAINP GAINP HETEROSTRUCTURES WITH TAPERED GROUNDED ABSORBER/

Authors
SEMENOV AT SHIDLOVSKI VR SAFIN SA KONYAEV VP ZVERKOV MV
Citation
At. Semenov et al., SUPERLUMINESCENT DIODES FOR VISIBLE (670 NM) SPECTRAL RANGE BASED ON ALGAINP GAINP HETEROSTRUCTURES WITH TAPERED GROUNDED ABSORBER/, Electronics Letters, 29(6), 1993, pp. 530-532
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
6
Year of publication
1993
Pages
530 - 532
Database
ISI
SICI code
0013-5194(1993)29:6<530:SDFV(N>2.0.ZU;2-H
Abstract
Visible (670 nm) superluminescent diodes (SLDs) based on AlGaInP/GaInP heterostructures with tapered grounded absorber have been developed. The SLDs have CW output power up to 4 mW at 20-degrees-C, spectral ban dwidth 12 nm and spectral ripple less than 10%.