HOLE TRAPS IN BE-DOPED MBE INGAP

Authors
KIM HS HAFICH MJ PATRIZI GA NANDA A VOGT TJ WOODS LM ROBINSON GY
Citation
Hs. Kim et al., HOLE TRAPS IN BE-DOPED MBE INGAP, Electronics Letters, 29(6), 1993, pp. 535-536
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
6
Year of publication
1993
Pages
535 - 536
Database
ISI
SICI code
0013-5194(1993)29:6<535:HTIBMI>2.0.ZU;2-O
Abstract
Deep level transient spectroscopy has been used to characterise p-type In0.48Ga0.52P grown by gas-source molecular beam epitaxy. Three hole traps were detected in Be-doped material, with thermal emission energi es of approximately 0.2-0-3, 0-7-0-8, and 1.0-1.3 eV and trap concentr ations less than 4 x 10(14), 9 x 10(14), and 10(15) cm-3, respectively .