FABRICATION AND CHARACTERIZATION OF SCHOTTKY GATE POLY(3-ALKYLTHIOPHENE) PLANAR FIELD-EFFECT TRANSISTORS

In this paper fabrication and characterization of Schottky gate planar field-effect transistors using poly(3-alkylthiophene) as an active se miconductor region are reported. This is the first time that planar ME SFET transistors utilizing a polymer semiconductor have been fabricate d and measured. Aluminium metal is used for the rectifying contact and two gold electrodes are constructed as source and drain. From the MES FET characteristic the channel carrier mobility is evaluated as 10(-5) cm2 V-1 s-1, which is one order of magnitude larger than a MOSFET uti lizing the same polymer.