INFLUENCE OF ELECTRON-PHONON INTERACTIONS ON THE PHYSICAL-PROPERTIES OF AN INTERFACE POLARON

Taking into account the interactions of both bulk longitudinal optical (LO) phonons and surface optical (SO) phonons and using Haga's pertur bation method, we derive an effective Hamiltonian for the interface ma gnetopolaron in polar crystals at zero temperature. We illustrate in d etails how to solve this effective Hamiltonian analytically and we obt ain explicit formulae not only for the electron cyclotron mass associa ted with the Landau levels but also for the self-trapping energy of th e magnetopolaron with respect to its first three quantum states in the direction normal to the interface of the system. Numerical results ar e calculated for some II-VI and III-V semiconductor compounds, indicat ing that the bulk LO phonons and SO phonons do have different trends o f effects on the electron in different quantum states.