A COMPREHENSIVE OPTIMIZATION OF INAIAS MOLECULAR-BEAM EPITAXY FOR INGAAS INAIAS HEMT TECHNOLOGY/

Authors
GEORGAKILAS A HALKIAS G CHRISTOU A KORNILIOS N PAPAVASSILIOU C ZEKENTES K KONSTANTINIDIS G PEIRO F CORNET A ABABOU S TABATA A GUILLOT G
Citation
A. Georgakilas et al., A COMPREHENSIVE OPTIMIZATION OF INAIAS MOLECULAR-BEAM EPITAXY FOR INGAAS INAIAS HEMT TECHNOLOGY/, Journal of the Electrochemical Society, 140(5), 1993, pp. 1503-1509
Citations number
19
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
140
Issue
5
Year of publication
1993
Pages
1503 - 1509
Database
ISI
SICI code
0013-4651(1993)140:5<1503:ACOOIM>2.0.ZU;2-8
Abstract
The effects of the substrate temperature in the molecular beam epitaxy growth of In0.52Al0.48As on (001)InP have been investigated. A strong dependence of the structural, electrical, and optical properties of I nAlAs films on the growth temperature has been found and optimized mat erial can be grown at 530-degrees-C. The low substrate temperatures de teriorate the material quality due to insufficient growth kinetics, wh ile the higher temperatures allow the formation of composition inhomog eneities which also deteriorate the structural, optical, and electrica l characteristics of In0.52Al0.48As. Using In0.52Al0.48As buffers grow n at 530-degrees-C, state-of-the-art InxGa1-xAs/In0.52Al0.48As high el ectron mobility transistors were fabricated and showed reduced output conductance and no kink eff ect in the I(V) characteristics.