NUMERICAL-ANALYSES ON THERMOFLUID EFFECTS IN HORIZONTAL SILICON CHEMICAL-VAPOR DEPOSITION REACTORS

A numerical study is performed for the Si deposition from silane in a horizontal rectangular reactor. The deposition rate is affected by var ious hydrodynamic, thermal, and concentration parameters. The hydrodyn amic effects of flow velocity and duct dimensions on the film growth r ate are well-correlated by the use of the inverse Graetz number as the streamwise nondimensional lengthscale. The effects of the aspect rati o and the thermal boundary conditions on the distributions of the film growth rate are examined in detail.