SIMS STUDY OF LOW-ENERGY H-2(-IMPLANTED YBA2CU3O7-DELTA THIN-FILMS() ION)

Thin films of YBa2Cu3O7-delta (YBCO) deposited by sputtering on LaAlO3 and SrTiO3 substrates have been implanted with 50 keV H-2+ (deuterium ) ions at doses of 1 x 1012 cm-2 and 1 X 10(16) cm-2. Depth profiles o f the high dose implants obtained by secondary ion mass spectrometry ( SIMS) were compared with Monte Carlo simulations (TRIM90) and showed e vidence of channelling in the substrates. The superconducting transiti on temperature, T(c), measured by a.c. susceptibility (ACS) disappeare d for the high dose implanted samples and X-ray diffractometry (XRD) s howed that the YBCO c-axis length had increased, indicating a loss in oxygen content. After annealing the implanted samples with a rapid the rmal annealer in O2 and N2 atmospheres, SIMS profiles indicated the fa st diffusion of deuterium out of the films.