THIN-FILMS OF (RE)BA2CU3O7 INSITU EPITAXIALLY GROWN BY LASER ABLATION- CRYSTALLINE-STRUCTURE, RESISTIVITY AND CRITICAL EXPONENTS OF TEMPERATURE-DEPENDENT CRITICAL CURRENTS

Citation
G. Dousselin et al., THIN-FILMS OF (RE)BA2CU3O7 INSITU EPITAXIALLY GROWN BY LASER ABLATION- CRYSTALLINE-STRUCTURE, RESISTIVITY AND CRITICAL EXPONENTS OF TEMPERATURE-DEPENDENT CRITICAL CURRENTS, Journal of alloys and compounds, 195(1-2), 1993, pp. 195-198
Citations number
18
Categorie Soggetti
Chemistry Physical","Metallurgy & Mining","Material Science
ISSN journal
09258388
Volume
195
Issue
1-2
Year of publication
1993
Pages
195 - 198
Database
ISI
SICI code
0925-8388(1993)195:1-2<195:TO(IEG>2.0.ZU;2-7
Abstract
c-axis thin films of (Rare-Earth)Ba2Cu3O7, (RE)BCO, superconductors ha ve been epitaxially grown by laser ablation. High crystalline quality has been revealed by electron channeling patterns (ECP). Superconducti ng properties of as-deposited films have been determined by resistive and inductive measurements before patterning. Transport critical curre nt densities of (RE = Y, Eu, Ho)BCO samples have been measured. Ho and Eu samples behave as homogeneous superconductors : Jc is-proportional -to (1- t)3/2. Discrepancies with power-law variations can be overcome when considering that thermally activated flux - lines motion governs the Jc's.