BIEPITAXIAL TEMPLATE GRAIN-BOUNDARIES WITH DIFFERENT INPLANE ANGLES ON (100) MGO SUBSTRATES

Citation
Rpj. Ijsselsteijn et al., BIEPITAXIAL TEMPLATE GRAIN-BOUNDARIES WITH DIFFERENT INPLANE ANGLES ON (100) MGO SUBSTRATES, Journal of alloys and compounds, 195(1-2), 1993, pp. 231-234
Citations number
9
Categorie Soggetti
Chemistry Physical","Metallurgy & Mining","Material Science
ISSN journal
09258388
Volume
195
Issue
1-2
Year of publication
1993
Pages
231 - 234
Database
ISI
SICI code
0925-8388(1993)195:1-2<231:BTGWDI>2.0.ZU;2-4
Abstract
Using laser ablation CeO2 and YBa2Cu3O7-d layers have been deposited o n (100) oriented MgO substrates for the creation of bi-epitaxial grain boundary weak links. X-Ray Diffraction measurements were used to meas ure the (in-plane) orientations of the layers. The CeO2 layer has been structured using Ar ion beam etching or CaO lift off. Using these two structuring techniques it is possible to obtain two different grain b oundary weak link angles: 18 and 27 degrees. Up till now only 45 degre es weak link angles have been reported in literature, using templates for the creation of these grain boundaries.