DEFECTS ANALYSIS OF INSITU GROWN BISRCACUO THIN-FILMS

Citation
L. Ranno et al., DEFECTS ANALYSIS OF INSITU GROWN BISRCACUO THIN-FILMS, Journal of alloys and compounds, 195(1-2), 1993, pp. 251-254
Citations number
6
Categorie Soggetti
Chemistry Physical","Metallurgy & Mining","Material Science
ISSN journal
09258388
Volume
195
Issue
1-2
Year of publication
1993
Pages
251 - 254
Database
ISI
SICI code
0925-8388(1993)195:1-2<251:DAOIGB>2.0.ZU;2-V
Abstract
Using the in situ laser ablation deposition technique, we have grown t hin superconducting films of the ''2212'' phase of the Bi compound (i. e. Bi2Sr2Ca1Cu2O8+y). Depending upon the precise growth conditions, va rious kinds of defects can be observed in such films : disturbed surfa ce morphology, intergrowth of various phases and crystalline defects w hich can degrade the transport properties of the films. The nature and density of these defects in the films have been studied, and possible ways to obtain defect free epitaxial BiSrCaCuO thin films are present ed and discussed.