YBACUO THIN-FILMS DEPOSITED BY ION-BEAM SPUTTERING ASSISTED BY IMPLANTATION OF - O, NE, AR, CU, KR, XE AND BA

Authors
GABORIAUD RJ SALMON E BENAYOUN S
Citation
Rj. Gaboriaud et al., YBACUO THIN-FILMS DEPOSITED BY ION-BEAM SPUTTERING ASSISTED BY IMPLANTATION OF - O, NE, AR, CU, KR, XE AND BA, Journal of alloys and compounds, 195(1-2), 1993, pp. 259-262
Citations number
15
Categorie Soggetti
Chemistry Physical","Metallurgy & Mining","Material Science
Journal title
Journal of alloys and compounds → ACNP
ISSN journal
09258388
Volume
195
Issue
1-2
Year of publication
1993
Pages
259 - 262
Database
ISI
SICI code
0925-8388(1993)195:1-2<259:YTDBIS>2.0.ZU;2-Z
Abstract
Amorphous thin films of YBaCuO are prepared, at room temperature, by i on beam sputter deposition (Kaufman source) assisted by energetic (150 KeV) ion implantation of 0, Ne, Ar, Cu, Kr, Xe, and Ba. Influence of the atomic mass of the incoming ions on the stoichiometry, density and dynamic sputtering process is studied. Stoichiometry is measured by R BS. Density and sputtered thickness are measured by grazing X ray refl ectometry.