DEPOSITION OF BUFFER LAYERS FOR MOCVD OF Y1BA2CU3O7-X ON GAAS

For the deposition of Y1Ba2Cu3O7-x on GaAs, a material well suited for microwave applications, it is inevitable to use a passivating buffer layer. In this paper we report on a study of the suitability of MOCVD- grown MgO and Y2O3 buffer layers as protecting films for the GaAs. It can be shown that it is possible to deposit MgO and Y2O3 buffer layers at relatively low substrate temperature. The possible detoriation of the GaAs is examined by low temperature photoluminescence. But neverth eless our attempts to grow Y1Ba2Cu3O7-x on these buffer layers reveal that it is inevitable to lower the deposition temperature for the HTc compound on buffer layers.