GROWTH OF SRCUO2 EPITAXIAL THIN-FILMS

Authors
KOLLER E MIEVILLE L TRISCONE G CORS J TRISCONE JM FISCHER O
Citation
E. Koller et al., GROWTH OF SRCUO2 EPITAXIAL THIN-FILMS, Journal of alloys and compounds, 195(1-2), 1993, pp. 303-306
Citations number
10
Categorie Soggetti
Chemistry Physical","Metallurgy & Mining","Material Science
Journal title
Journal of alloys and compounds → ACNP
ISSN journal
09258388
Volume
195
Issue
1-2
Year of publication
1993
Pages
303 - 306
Database
ISI
SICI code
0925-8388(1993)195:1-2<303:GOSET>2.0.ZU;2-7
Abstract
We report on the growth of SrCuO2 thin films prepared by RF reactive m agnetron sputtering onto (100) SrTiO3 substrates. Epitaxial (001) SrCu O2 films are obtained at 550-degrees-C in a sputtering pressure of 1-1 0m Torr of Ar. Off axis x-ray analysis reveals perfect in plane orderi ng. We find, depending on the preparation conditions, changes in the c -axis value, which may be due to a change in the Sr-Cu-O concentration s. These modifications are correlated to changes in the resistivity of the films.