PREPARATION OF 110K BI(PB)SRCACUO SUPERCONDUCTING THIN-FILMS BY RF MAGNETRON SPUTTERING AND THEIR RESPONSE TO MICROWAVE-RADIATION

Citation
A. Guldeste et al., PREPARATION OF 110K BI(PB)SRCACUO SUPERCONDUCTING THIN-FILMS BY RF MAGNETRON SPUTTERING AND THEIR RESPONSE TO MICROWAVE-RADIATION, Journal of alloys and compounds, 195(1-2), 1993, pp. 591-594
Citations number
9
Categorie Soggetti
Chemistry Physical","Metallurgy & Mining","Material Science
ISSN journal
09258388
Volume
195
Issue
1-2
Year of publication
1993
Pages
591 - 594
Database
ISI
SICI code
0925-8388(1993)195:1-2<591:PO1BST>2.0.ZU;2-E
Abstract
Bi(Pb)SrCaCuO thin films containing a high ratio of Pb (Pb/Bi>1), abou t 0.5 mum thick, were deposited on single crystal LaAlO3, SrTiO3 and M gO substrates by using a heavily Pb doped single composite oxide targe t. The film deposited on (001) MgO at a substrate temperature of 170-d egrees-C and sintered at 852-862-degrees-C for 1 hour in air showed ze ro resistivity at 100K. The highest critical current density of 4.6 x 10(4) Amp/cm2 at 77K has been measured on the film grown on (100) LaAl O3. The dependence of the high-Tc (2223) and low-Tc (2212) phase conce ntrations on annealing temperature was also studied by X-ray diffracti on. The highest fraction of the 2223 phase was obtained on the film an nealed at 862-degrees-C for 1 hour. Microwave response measurements we re carried out on a film patterned into a 150 mum wide and 1 cm long m eander-type structure using standard photolithography and wet chemical etching. The result showed that the microwave response contains a non -bolometric component.