ACOUSTOELECTRIC EFFECT AND PHONON-DRAG ELECTRON THERMOELECTRIC-POWER UNDER WEAK LOCALIZATION CONDITIONS

Authors
AFONIN VV GALPERIN YM
Citation
Vv. Afonin et Ym. Galperin, ACOUSTOELECTRIC EFFECT AND PHONON-DRAG ELECTRON THERMOELECTRIC-POWER UNDER WEAK LOCALIZATION CONDITIONS, Semiconductors, 27(1), 1993, pp. 61-65
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
1
Year of publication
1993
Pages
61 - 65
Database
ISI
SICI code
1063-7826(1993)27:1<61:AEAPET>2.0.ZU;2-X
Abstract
Interference corrections to the drag of electrons by phonons and to th e acoustoelectric effect are studied. It is shown that in a standard s ituation the localization corrections to the drag effect are suppresse d and, therefore, it is more attractive to study them in the acoustoel ectric effect when there is no such suppression. Recent experimental r esults on an interference effect in the thermoelectric power are discu ssed.