EDGE LUMINESCENCE OF ELECTRON-BOMBARDED ZNSELI

The edge luminescence spectra of ZnSe bombarded with 6-MeV electrons w ere found to include a band (2.703 eV) due to recombination of donor-a cceptor pairs. The results obtained demonstrated that the R acceptor w as a substitutional impurity Li(Zn) and the R donor was associated wit h the host lattice defects created by electron bombardment. The most p robable R donor was a doubly ionized neutral selenium vacancy. Formati on of selenium vacancies in the charge state V(Se)+ as a result of rad iation damage to the selenium sublattice was confined by an ESR study carried out earlier by the present author.