INFLUENCE OF THE SURFACE-TREATMENT OF GALLIUM-ARSENIDE IN CHALCOGEN VAPORS ON THE PROPERTIES OF SCHOTTKY BARRIERS IN ME-GAAS STRUCTURES

Authors
SYSOEV BI BEZRYADIN NN KOTOV GI STRYGIN VD
Citation
Bi. Sysoev et al., INFLUENCE OF THE SURFACE-TREATMENT OF GALLIUM-ARSENIDE IN CHALCOGEN VAPORS ON THE PROPERTIES OF SCHOTTKY BARRIERS IN ME-GAAS STRUCTURES, Semiconductors, 27(1), 1993, pp. 69-71
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
1
Year of publication
1993
Pages
69 - 71
Database
ISI
SICI code
1063-7826(1993)27:1<69:IOTSOG>2.0.ZU;2-P
Abstract
The electrical properties of Al-GaAs and Au-GaAs structures with inter mediate layers consisting of A2(III)B3VI compounds formed by treatment of GaAs substrates in chalcogen vapors have been studied experimental ly. The height of the Schottky barrier in the Me-GaAs system was found to depend on the type of chalcogen used in the treatment and, consequ ently, on the composition of the A2(III)B3VI compound formed on the su rface of GaAs. The minimum density of the surface electron states in M e-GaAs structures was reached when the crystal lattice constants of Ga As and A2(III)B3VI were equal.