STRUCTURE DEFECTS AND PHOTOLUMINESCENCE OF EPITAXIAL INXGA1-XAS FILMS

Authors
SEMENOVA GN KLADKO VP KRYSHTAB TG SADOFEV YG SVITELSKII AV KORYTTSEV SV
Citation
Gn. Semenova et al., STRUCTURE DEFECTS AND PHOTOLUMINESCENCE OF EPITAXIAL INXGA1-XAS FILMS, Semiconductors, 27(1), 1993, pp. 86-89
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
1
Year of publication
1993
Pages
86 - 89
Database
ISI
SICI code
1063-7826(1993)27:1<86:SDAPOE>2.0.ZU;2-5
Abstract
The methods of low-temperature photoluminescence, x-ray topography, an d diffractometry were used in a study of the influence of the solid-so lution composition on the structure and properties of InxGa1-xAs (0.00 2 less-than-or-equal-to x less-than-or-equal-to 0.01) films grown by m olecular beam epitaxy.