We have investigated possible water adsorption forms on stepped Si(111
) surface. Calculations have been performed by using the empirical tig
ht-binding method. Two types of adsorption model of water on single la
yer stepped Si(111) surface have been considered; one of them is the d
issociative type (H, OH) and the other is the molecular type (H2O). Th
e total electronic energy and TDOS calculations lead to a dissociative
type of adsorption of water on stepped Si(111) surface excluding the
molecular type. (C) 1997 Elsevier Science B.V.