ELECTRONIC-PROPERTIES OF SN SI(100) ORDERED INTERFACES/

Citation
M. Pedio et A. Cricenti, ELECTRONIC-PROPERTIES OF SN SI(100) ORDERED INTERFACES/, Surface science, 374(1-3), 1997, pp. 251-258
Citations number
15
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
374
Issue
1-3
Year of publication
1997
Pages
251 - 258
Database
ISI
SICI code
0039-6028(1997)374:1-3<251:EOSSOI>2.0.ZU;2-I
Abstract
We studied the optical and electronic structures of the different orde red superstructures of Sn grown on Si(100)2 x 1 by means of angular re solved photoemission (ARUPS), surface differential reflectivity (SDR), Auger and low energy electron diffraction (LEED). Five different reco nstructions, showing a semiconductor character, have been found. For t he (5 x 1)Sn/Si(100) interface one dispersive surface state is identif ied, while for the other superstructures, c(4 x 4), (6 x 2) and (4 x 1 ), the ARUPS spectra show two non-dispersive tin-induced states. For t he c(8 x 4) reconstruction three surface states are clearly identified : one non-dispersive state at 0.9 eV below the Fermi level, one state at the border of the surface Brillouin zone with a binding energy of 1 .7 eV and one highly dispersive state between 1.6 and 2.8 eV below the Fermi level. On this surface SDR revealed four optical transitions in the energy range between 1.3 and 3.5 eV. (C) 1997 Elsevier Science B. V.