SB ON SI(111) STUDIED BY BRANCHING-RATIO PHOTOELECTRON HOLOGRAPHY

Authors
LUH DA SIEGER MT MILLER T CHIANG TC
Citation
Da. Luh et al., SB ON SI(111) STUDIED BY BRANCHING-RATIO PHOTOELECTRON HOLOGRAPHY, Surface science, 374(1-3), 1997, pp. 345-349
Citations number
19
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
374
Issue
1-3
Year of publication
1997
Pages
345 - 349
Database
ISI
SICI code
0039-6028(1997)374:1-3<345:SOSSBB>2.0.ZU;2-#
Abstract
Branching-ratio photoelectron holography has been employed to study th e structure of Sb adsorbed on Si(111). The Sb 4d core-level emission w as measured as a function of emission direction, and the branching rat io between the two spin-orbit-split components was determined, The dat a were holographically transformed to yield an image for the atomic di stributions near the Sb emitter. The results are consistent with a tri mer model. (C) 1997 Elsevier Science B.V.