Em. Verbitskaya et al., CHARACTERISTIC FEATURES OF THE GENERATION CURRENT IN ALPHA-IRRADIATEDP-N JUNCTIONS MADE FROM HIGH-RESISTIVITY SILICON(), Semiconductors, 27(2), 1993, pp. 115-119
A study was made of the changes in the reverse current in diodes made
from high-resistivity n-type Si, when these diodes were bombarded with
a particles and then subjected to isochronous annealing. The paramete
rs of radiation defects were determined by the DLTs method and the spe
ctra were analyzed by mathematical modeling. It was established that d
eep centers associated with interstitial carbon played an important ro
le in the generation current. Low-temperature annealing (150-degrees-C
) was an effective means for the recovery of the reverse current throu
gh a diode.