CHARACTERISTIC FEATURES OF THE GENERATION CURRENT IN ALPHA-IRRADIATEDP-N JUNCTIONS MADE FROM HIGH-RESISTIVITY SILICON()

Authors
VERBITSKAYA EM EREMIN VK IVANOV AM STROKAN NB
Citation
Em. Verbitskaya et al., CHARACTERISTIC FEATURES OF THE GENERATION CURRENT IN ALPHA-IRRADIATEDP-N JUNCTIONS MADE FROM HIGH-RESISTIVITY SILICON(), Semiconductors, 27(2), 1993, pp. 115-119
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
2
Year of publication
1993
Pages
115 - 119
Database
ISI
SICI code
1063-7826(1993)27:2<115:CFOTGC>2.0.ZU;2-E
Abstract
A study was made of the changes in the reverse current in diodes made from high-resistivity n-type Si, when these diodes were bombarded with a particles and then subjected to isochronous annealing. The paramete rs of radiation defects were determined by the DLTs method and the spe ctra were analyzed by mathematical modeling. It was established that d eep centers associated with interstitial carbon played an important ro le in the generation current. Low-temperature annealing (150-degrees-C ) was an effective means for the recovery of the reverse current throu gh a diode.