EFFECT OF LASER IRRADIATION ON PHYSICAL-PROPERTIES OF HIGH-RESISTIVITY ZNSE CRYSTALS

Authors
ARTAMONOV VV BAIDULLAEVA A BELYAEV SV VLASENKO AI GNATYUK VA MOZOL PE
Citation
Vv. Artamonov et al., EFFECT OF LASER IRRADIATION ON PHYSICAL-PROPERTIES OF HIGH-RESISTIVITY ZNSE CRYSTALS, Semiconductors, 27(2), 1993, pp. 127-130
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
2
Year of publication
1993
Pages
127 - 130
Database
ISI
SICI code
1063-7826(1993)27:2<127:EOLIOP>2.0.ZU;2-6
Abstract
The photoconductivity, photoluminescence, and Raman scattering of ligh t were studied in high resistivity, undoped, cubic ZnSe crystals with different concentrations of accidental impurities, which were subjecte d to nanosecond ruby laser pulses of subthreshold intensity. The stead y-state photoconductivity increased. The spectrum of the photoconducti vity of the samples with a low accidental impurity concentration chang ed. Laser bombardment altered the defect structure of the surface laye rs of crystals.