USE OF THE DLTS METHOD TO STUDY DEFECTS FORMED IN SILICON AS A RESULTOF BOMBARDING IT WITH N-TEMPERATURES( IONS AT HIGH)

The method of deep-level transient spectroscopy was used in an investi gation of silicon implanted with 135-keV nitrogen ions, delivered in d oses of 10(14)-10(15) cm-2 at temperatures of 500-900-degrees-C, the f ollowing levels were observed in the upper half of the band gap: E(c) - 0.31, E(c) - 0.40, and E(c) - 0.60 eV. These levels are probably due to dangling bonds (or dangling bond-impurity complexes) at extended d efects (rod-shaped and dissociation loops). When the bombardment tempe rature was increased to 700-degrees-C, the observed defect spectrum ch anged. Levels appeared at E(c) - 0.10 and E(c) - 0.13 eV, as well as a peak representing a combined signal from the spectrum of levels in th e range from E(c) - 0.17 eV to E(c) - 0.35 eV. An investigation of the dose dependence of the process of defect accumulation, and of the spa tial distribution of defects, combined with a comparison of the number of defects generated by implantation of Ne+ ions, made it possible to link the first two levels with silicon nitride inclusions and the thi rd peak with radiation defects.