MAGNETOELECTRIC EFFECT IN TYPE-I ZERO-GAP SEMICONDUCTORS

Authors
MARGULIS AD MARGULIS VA
Citation
Ad. Margulis et Va. Margulis, MAGNETOELECTRIC EFFECT IN TYPE-I ZERO-GAP SEMICONDUCTORS, Semiconductors, 27(2), 1993, pp. 178-180
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
2
Year of publication
1993
Pages
178 - 180
Database
ISI
SICI code
1063-7826(1993)27:2<178:MEITZS>2.0.ZU;2-#
Abstract
The flow of an electric current through a zero-gap semiconductor with a linear (neutrino-like) dispersion law of electron was found to give rise to a magnetization proportional to the applied electric field. Th is kinetic magnetoelectric effect occurs as a result of the polarizati on of electron spins in the effective magnetic field induced by the el ectric current.