EPITAXIAL SILICIDE FORMATION IN THE MG SI(111) SYSTEM/

The silicide formation has been studied in the Mg/Si(111) system by IO W energy electron diffraction (LEED) and photoelectron spectroscopy. I t has been found that an epitaxial Mg2Si silicide is responsible for t he (2/3 square-root e x 2/3 square-root 3)R30-degrees reconstruction i n this system. The thickness of the silicide is limited due to the ver y low formation temperature for this silicide. The Fermi level is posi tioned 0.59 +/- 0.06 eV above the valence band maximum in the Si subst rate and the valence band maximum in the epitaxial silicide is positio ned 0.3 +/- 0.1 eV below the Fermi level.