CARRIER TRANSPORT-PROPERTIES OF SPUTTER-DEPOSITED CDS CDTE HETEROJUNCTION/

CdS, CdTe and CdS/CdTe heterojunction films were deposited on glass su bstrates by RF sputter deposition using undoped CdS and CdTe targets, respectively. The deposited CdS and CdTe films have high resistivities greater than 10(6) OMEGA.cm and 10(9) OMEGA.cm, and preferential orie ntations at (002) and (111) planes, respectively. CdS/CdTe heterojunct ion film shows good rectification properties. The carrier transport pr operties of the CdS/CdTe heterojunction were investigated by means of current-voltage measurements at different temperatures. The forward cu rrent is classified into the tunneling-recombination current, recombin ation current, space charge limited current (SCLC) and trap filling of SCLC regions by considering applied voltage. The reverse current is d ominated by the generation recombination current in the depletion regi on of the CdTe layer.